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PD -91845 IRF1104S/L HEXFET(R) Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS(on) = 0.009 G ID = 100A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1104L) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 100 71 400 2.4 170 1.1 20 350 60 17 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient(PCB Mounted,steady-state)** Typ. --- --- Max. 0.9 62 Units C/W www.irf.com 1 11/20/98 IRF1104S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 40 --- --- 2.0 37 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.038 --- --- --- --- --- --- --- --- --- --- 15 114 28 19 7.5 2900 1100 250 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.009 VGS = 10V, ID = 60A 4.0 V VDS = VGS, ID = 250A --- S VDS = 30V, ID = 60A 25 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 93 ID = 60A 29 nC VDS = 32V 30 VGS = 10V, See Fig. 6 and 13 --- VDD = 20V --- ID = 60A ns --- RG = 3.6 --- RD = 0.33, See Fig. 10 Between lead, --- nH and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD trr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 100 showing the A G integral reverse --- --- 400 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS =60A, VGS = 0V --- 74 110 ns TJ = 25C, IF =60A --- 188 280 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 194H RG = 25, IAS = 60A. (See Figure 12) Pulse width 300s; duty cycle 2%. Uses IRF1104 data and test conditions. Calculated continuous current based on maximum allowable ISD 60A, di/dt 304A/s, VDD V(BR)DSS, junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRF1104S/L 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 10 4.5V 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 1 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 100A I D , Drain-to-Source Current (A) 100 TJ = 175 C 2.0 1.5 10 TJ = 25 C 1 1.0 0.5 0.1 4.0 V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1104S/L 5000 4000 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 60A VDS = 32V VDS = 20V C, Capacitance (pF) 15 3000 Ciss 10 2000 Coss 1000 5 Crss 0 1 10 100 0 0 25 50 FOR TEST CIRCUIT SEE FIGURE 13 75 100 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 10us TJ = 175 C 10 I D , Drain Current (A) 100 100 100us 1ms 1 TJ = 25 C 10 10ms 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 1 TC = 25 C TJ = 175 C Single Pulse 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF1104S/L 100 LIMITED BY PACKAGE V DS VGS RD 80 D.U.T. + I D , Drain Current (A) RG -V DD 60 10V Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1104S/L EAS , Single Pulse Avalanche Energy (mJ) 800 TOP BOTTOM 600 1 5V ID 24A 42A 60A VD S L D R IV E R RG 20V D .U .T IA S tp + V - DD 400 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 175 V (B R )D S S tp Starting T , Junction Temperature( C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF1104S/L Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRF1104S/L D2Pak Package Details 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 10.16 (.400) REF. 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 (.200 ) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) 1 .39 (.055) 1 .14 (.045) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X Part Marking IN TE R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE PART NUMBER F530S 9246 9B 1M A D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK 8 www.irf.com IRF1104S/L TO-262 Package Details Part Marking www.irf.com 9 IRF1104S/L D2Pak Tape and Reel TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) F E E D D IR E C T IO N 1 3.5 0 (.5 32 ) 1 2.8 0 (.5 04 ) 2 7.4 0 (1 .07 9) 2 3.9 0 (.9 41 ) 4 330.00 (14.173) M A X. 6 0.0 0 (2 .3 6 2) M IN . N O TES : 1. C O M F O R M S T O E IA -41 8 . 2. C O N T R O L LIN G D IM E N S IO N : M ILL IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 26 .40 (1.039) 24 .40 (.961) 3 3 0.4 0 (1 .1 97 ) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 11/98 10 www.irf.com |
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